MASTERGAN1 High Power Density Half-Bridge

STMicroelectronics' high power density half-bridge high voltage driver includes two 650 V enhancement-mode GaN HEMTs

STMicroelectronics' MASTERGAN1 is the first 600 V half-bridge driver with a GaN HEMT system in package (SiP) in the world and the first element of MASTERGAN platform. MASTERGAN1 is compact, making it possible to implement the high power density power supply, even four times smaller than the power supply based on MOSFET switches, thanks to higher switching frequency of GaNs and high integration of both the driver and two GaN switches in the same package. It also offers robustness. The offline driver is optimized for GaN HEMT for fast, effective, and safe driving and layout simplification. The management of discreet GaN switches could be tough, but the embedded driver manages GaN switches to simplify power supply design.