Choose your country or region.

Home
Products
Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
FDN8601

FDN8601

AMI Semiconductor / ON Semiconductor
Image may be representation.
See specifications for product details.
AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
Part Number:
FDN8601
Manufacturer/Brand:
AMI Semiconductor / ON Semiconductor
Product Description:
MOSFET N-CH 100V 2.7A 3SSOT
Datasheets:
1.FDN8601.pdf2.FDN8601.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
141634 pcs stock
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

REQUEST QUOTE

Please complete all required fields with your contact information.Click "SUBMIT RFQ"
we will contact you shortly by email. Or Email us:info@Micro-Semiconductors.com

In Stock 141634 pcs Reference Price(In US Dollars)

  • 1 pcs
    $0.378
  • 10 pcs
    $0.334
  • 100 pcs
    $0.264
  • 500 pcs
    $0.205
  • 1000 pcs
    $0.162
Target Price(USD):
Qty:
Please give us your target price if quantities greater than those displayed.
Total: $0.00
FDN8601
Company Name
Contact Name
E-mail
Message
AMI Semiconductor / ON Semiconductor

Specifications of FDN8601

AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
(Click the blank to close automatically)
Part Number FDN8601 Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 100V 2.7A 3SSOT Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 141634 pcs stock Data sheet 1.FDN8601.pdf2.FDN8601.pdf
Vgs(th) (Max) @ Id 4V @ 250µA Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Supplier Device Package SuperSOT-3
Series PowerTrench® Rds On (Max) @ Id, Vgs 109 mOhm @ 1.5A, 10V
Power Dissipation (Max) 1.5W (Ta) Packaging Original-Reel®
Package / Case TO-236-3, SC-59, SOT-23-3 Other Names FDN8601DKR
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 29 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 210pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 100V Detailed Description N-Channel 100V 2.7A (Ta) 1.5W (Ta) Surface Mount SuperSOT-3
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta)  
Shut down

Related Products

Related tags

Hot information