Part Number | FQP4N20 | Manufacturer | AMI Semiconductor / ON Semiconductor |
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Description | MOSFET N-CH 200V 3.6A TO-220 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 5683 pcs stock | Data sheet | 1.FQP4N20.pdf2.FQP4N20.pdf |
Vgs(th) (Max) @ Id | 5V @ 250µA | Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | TO-220-3 |
Series | QFET® | Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1.8A, 10V |
Power Dissipation (Max) | 45W (Tc) | Packaging | Tube |
Package / Case | TO-220-3 | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 10V | FET Type | N-Channel |
FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 200V | Detailed Description | N-Channel 200V 3.6A (Tc) 45W (Tc) Through Hole TO-220-3 |
Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
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