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SI4500BDY-T1-E3

SI4500BDY-T1-E3

Electro-Films (EFI) / Vishay
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See specifications for product details.
Electro-Films (EFI) / VishayElectro-Films (EFI) / Vishay
Part Number:
SI4500BDY-T1-E3
Manufacturer/Brand:
Electro-Films (EFI) / Vishay
Product Description:
MOSFET N/P-CH 20V 6.6A 8SOIC
Datasheets:
SI4500BDY-T1-E3.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
5046 pcs stock
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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SI4500BDY-T1-E3
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Electro-Films (EFI) / Vishay

Specifications of SI4500BDY-T1-E3

Electro-Films (EFI) / VishayElectro-Films (EFI) / Vishay
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Part Number SI4500BDY-T1-E3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N/P-CH 20V 6.6A 8SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5046 pcs stock Data sheet SI4500BDY-T1-E3.pdf
Vgs(th) (Max) @ Id 1.5V @ 250µA Supplier Device Package 8-SO
Series TrenchFET® Rds On (Max) @ Id, Vgs 20 mOhm @ 9.1A, 4.5V
Power - Max 1.3W Packaging Cut Tape (CT)
Package / Case 8-SOIC (0.154", 3.90mm Width) Other Names SI4500BDY-T1-E3CT
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds - Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
FET Type N and P-Channel, Common Drain FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V Detailed Description Mosfet Array N and P-Channel, Common Drain 20V 6.6A, 3.8A 1.3W Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C 6.6A, 3.8A Base Part Number SI4500
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