Part Number | FDP55N06 | Manufacturer | AMI Semiconductor / ON Semiconductor |
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Description | MOSFET N-CH 60V 55A TO-220 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 88435 pcs stock | Data sheet | 1.FDP55N06.pdf2.FDP55N06.pdf |
Vgs(th) (Max) @ Id | 4V @ 250µA | Vgs (Max) | ±25V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | TO-220-3 |
Series | UniFET™ | Rds On (Max) @ Id, Vgs | 22 mOhm @ 27.5A, 10V |
Power Dissipation (Max) | 114W (Tc) | Packaging | Tube |
Package / Case | TO-220-3 | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 8 Weeks | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1510pF @ 25V | Gate Charge (Qg) (Max) @ Vgs | 37nC @ 10V |
FET Type | N-Channel | FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Drain to Source Voltage (Vdss) | 60V |
Detailed Description | N-Channel 60V 55A (Tc) 114W (Tc) Through Hole TO-220-3 | Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
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