Choose your country or region.

Home
Products
Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
FDP55N06

FDP55N06

AMI Semiconductor / ON Semiconductor
Image may be representation.
See specifications for product details.
AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
Part Number:
FDP55N06
Manufacturer/Brand:
AMI Semiconductor / ON Semiconductor
Product Description:
MOSFET N-CH 60V 55A TO-220
Datasheets:
1.FDP55N06.pdf2.FDP55N06.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
88435 pcs stock
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

REQUEST QUOTE

Please complete all required fields with your contact information.Click "SUBMIT RFQ"
we will contact you shortly by email. Or Email us:info@Micro-Semiconductors.com

In Stock 88435 pcs Reference Price(In US Dollars)

  • 1 pcs
    $0.584
  • 10 pcs
    $0.517
  • 100 pcs
    $0.409
  • 500 pcs
    $0.317
  • 1000 pcs
    $0.25
Target Price(USD):
Qty:
Please give us your target price if quantities greater than those displayed.
Total: $0.00
FDP55N06
Company Name
Contact Name
E-mail
Message
AMI Semiconductor / ON Semiconductor

Specifications of FDP55N06

AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
(Click the blank to close automatically)
Part Number FDP55N06 Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 60V 55A TO-220 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 88435 pcs stock Data sheet 1.FDP55N06.pdf2.FDP55N06.pdf
Vgs(th) (Max) @ Id 4V @ 250µA Vgs (Max) ±25V
Technology MOSFET (Metal Oxide) Supplier Device Package TO-220-3
Series UniFET™ Rds On (Max) @ Id, Vgs 22 mOhm @ 27.5A, 10V
Power Dissipation (Max) 114W (Tc) Packaging Tube
Package / Case TO-220-3 Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 25V Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 60V
Detailed Description N-Channel 60V 55A (Tc) 114W (Tc) Through Hole TO-220-3 Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Shut down

Related Products

Related tags

Hot information