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MMUN2211LT1G

MMUN2211LT1G

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AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
Part Number:
MMUN2211LT1G
Manufacturer/Brand:
AMI Semiconductor / ON Semiconductor
Product Description:
TRANS PREBIAS NPN 246MW SOT23-3
Datasheets:
MMUN2211LT1G.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
6217109 pcs stock
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 6217109 pcs Reference Price(In US Dollars)

  • 3000 pcs
    $0.008
  • 6000 pcs
    $0.007
  • 15000 pcs
    $0.006
  • 30000 pcs
    $0.005
  • 75000 pcs
    $0.005
  • 150000 pcs
    $0.004
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Specifications of MMUN2211LT1G

AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
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Part Number MMUN2211LT1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 246MW SOT23-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 6217109 pcs stock Data sheet MMUN2211LT1G.pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Transistor Type NPN - Pre-Biased Supplier Device Package SOT-23-3 (TO-236)
Series - Resistor - Emitter Base (R2) 10 kOhms
Resistor - Base (R1) 10 kOhms Power - Max 246mW
Packaging Tape & Reel (TR) Package / Case TO-236-3, SC-59, SOT-23-3
Other Names MMUN2211LT1GOS
MMUN2211LT1GOS-ND
MMUN2211LT1GOSTR
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 36 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA Base Part Number MMUN22**L
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