Part Number | SI4936BDY-T1-E3 | Manufacturer | Electro-Films (EFI) / Vishay |
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Description | MOSFET 2N-CH 30V 6.9A 8-SOIC | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 125407 pcs stock | Data sheet | SI4936BDY-T1-E3.pdf |
Vgs(th) (Max) @ Id | 3V @ 250µA | Supplier Device Package | 8-SO |
Series | TrenchFET® | Rds On (Max) @ Id, Vgs | 35 mOhm @ 5.9A, 10V |
Power - Max | 2.8W | Packaging | Cut Tape (CT) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | Other Names | SI4936BDY-T1-E3CT |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Standard Lead Time | 33 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V | FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate | Drain to Source Voltage (Vdss) | 30V |
Detailed Description | Mosfet Array 2 N-Channel (Dual) 30V 6.9A 2.8W Surface Mount 8-SO | Current - Continuous Drain (Id) @ 25°C | 6.9A |
Base Part Number | SI4936 |
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