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SIHB22N60S-GE3

SIHB22N60S-GE3

SIHB22N60S-GE3 Image
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See specifications for product details.
Electro-Films (EFI) / VishayElectro-Films (EFI) / Vishay
Part Number:
SIHB22N60S-GE3
Manufacturer/Brand:
Electro-Films (EFI) / Vishay
Product Description:
MOSFET N-CH 650V TO263
Datasheets:
SIHB22N60S-GE3.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
5613 pcs stock
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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SIHB22N60S-GE3 Image

Specifications of SIHB22N60S-GE3

Electro-Films (EFI) / VishayElectro-Films (EFI) / Vishay
(Click the blank to close automatically)
Part Number SIHB22N60S-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 650V TO263 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5613 pcs stock Data sheet SIHB22N60S-GE3.pdf
Vgs(th) (Max) @ Id 4V @ 250µA Vgs (Max) ±30V
Technology MOSFET (Metal Oxide) Supplier Device Package D²PAK (TO-263)
Series S Rds On (Max) @ Id, Vgs 190 mOhm @ 11A, 10V
Power Dissipation (Max) 250W (Tc) Packaging Tape & Reel (TR)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 2.81nF @ 25V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V Detailed Description N-Channel 600V 22A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
Current - Continuous Drain (Id) @ 25°C 22A (Tc)  
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