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GP2M012A080NG

GP2M012A080NG

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Global Power Technologies GroupGlobal Power Technologies Group
Part Number:
GP2M012A080NG
Manufacturer/Brand:
Global Power Technologies Group
Product Description:
MOSFET N-CH 800V 12A TO3PN
Datasheets:
GP2M012A080NG.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
5617 pcs stock
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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GP2M012A080NG Image

Specifications of GP2M012A080NG

Global Power Technologies GroupGlobal Power Technologies Group
(Click the blank to close automatically)
Part Number GP2M012A080NG Manufacturer Global Power Technologies Group
Description MOSFET N-CH 800V 12A TO3PN Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5617 pcs stock Data sheet GP2M012A080NG.pdf
Vgs(th) (Max) @ Id 5V @ 250µA Vgs (Max) ±30V
Technology MOSFET (Metal Oxide) Supplier Device Package TO-3PN
Series - Rds On (Max) @ Id, Vgs 650 mOhm @ 6A, 10V
Power Dissipation (Max) 416W (Tc) Packaging Tube
Package / Case TO-3P-3, SC-65-3 Other Names 1560-1211-1
1560-1211-1-ND
1560-1211-5
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 3370pF @ 25V Gate Charge (Qg) (Max) @ Vgs 79nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 800V
Detailed Description N-Channel 800V 12A (Tc) 416W (Tc) Through Hole TO-3PN Current - Continuous Drain (Id) @ 25°C 12A (Tc)
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