Choose your country or region.

Home
Products
Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
BSC046N02KS G

BSC046N02KS G

BSC046N02KS G Image
Image may be representation.
See specifications for product details.
Infineon TechnologiesInfineon Technologies
Part Number:
BSC046N02KS G
Manufacturer/Brand:
International Rectifier (Infineon Technologies)
Product Description:
MOSFET N-CH 20V 80A TDSON-8
Datasheets:
BSC046N02KS G.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
136042 pcs stock
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

REQUEST QUOTE

Please complete all required fields with your contact information.Click "SUBMIT RFQ"
we will contact you shortly by email. Or Email us:info@Micro-Semiconductors.com

In Stock 136042 pcs Reference Price(In US Dollars)

  • 5000 pcs
    $0.17
  • 10000 pcs
    $0.164
Target Price(USD):
Qty:
Please give us your target price if quantities greater than those displayed.
Total: $0.00
BSC046N02KS G
Company Name
Contact Name
E-mail
Message
BSC046N02KS G Image

Specifications of BSC046N02KS G

Infineon TechnologiesInfineon Technologies
(Click the blank to close automatically)
Part Number BSC046N02KS G Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 20V 80A TDSON-8 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 136042 pcs stock Data sheet BSC046N02KS G.pdf
Voltage - Test 4100pF @ 10V Voltage - Breakdown PG-TDSON-8
Vgs(th) (Max) @ Id 4.6 mOhm @ 50A, 4.5V Vgs (Max) 2.5V, 4.5V
Technology MOSFET (Metal Oxide) Series OptiMOS™
RoHS Status Tape & Reel (TR) Rds On (Max) @ Id, Vgs 19A (Ta), 80A (Tc)
Polarization 8-PowerTDFN Other Names BSC046N02KS G-ND
BSC046N02KS GTR
BSC046N02KSG
BSC046N02KSGAUMA1
SP000379666
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 3 (168 Hours) Manufacturer Standard Lead Time 16 Weeks
Manufacturer Part Number BSC046N02KS G Input Capacitance (Ciss) (Max) @ Vds 27.6nC @ 4.5V
IGBT Type ±12V Gate Charge (Qg) (Max) @ Vgs 1.2V @ 110µA
FET Feature N-Channel Expanded Description N-Channel 20V 19A (Ta), 80A (Tc) 2.8W (Ta), 48W (Tc) Surface Mount PG-TDSON-8
Drain to Source Voltage (Vdss) - Description MOSFET N-CH 20V 80A TDSON-8
Current - Continuous Drain (Id) @ 25°C 20V Capacitance Ratio 2.8W (Ta), 48W (Tc)
Shut down

Related Products

Related tags

Hot information