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EMD53T2R

EMD53T2R

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See specifications for product details.
LAPIS SemiconductorLAPIS Semiconductor
Part Number:
EMD53T2R
Manufacturer/Brand:
LAPIS Semiconductor
Product Description:
TRANS NPN/PNP PREBIAS 0.15W EMT6
Datasheets:
1.EMD53T2R.pdf2.EMD53T2R.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
1376346 pcs stock
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 1376346 pcs Reference Price(In US Dollars)

  • 8000 pcs
    $0.024
  • 16000 pcs
    $0.022
  • 24000 pcs
    $0.02
  • 56000 pcs
    $0.018
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Specifications of EMD53T2R

LAPIS SemiconductorLAPIS Semiconductor
(Click the blank to close automatically)
Part Number EMD53T2R Manufacturer LAPIS Semiconductor
Description TRANS NPN/PNP PREBIAS 0.15W EMT6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1376346 pcs stock Data sheet 1.EMD53T2R.pdf2.EMD53T2R.pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 5mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) Supplier Device Package EMT6
Series - Resistor - Emitter Base (R2) 10 kOhms
Resistor - Base (R1) 10 kOhms Power - Max 150mW
Packaging Tape & Reel (TR) Package / Case SOT-563, SOT-666
Other Names EMD53T2RTR Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 10 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6 DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA
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