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RN2318(TE85L,F)

RN2318(TE85L,F)

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Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
RN2318(TE85L,F)
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
TRANS PREBIAS PNP 0.1W USM
Datasheets:
RN2318(TE85L,F).pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
2224830 pcs stock
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 2224830 pcs Reference Price(In US Dollars)

  • 3000 pcs
    $0.018
  • 6000 pcs
    $0.015
  • 15000 pcs
    $0.013
  • 30000 pcs
    $0.012
  • 75000 pcs
    $0.012
  • 150000 pcs
    $0.01
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RN2318(TE85L,F) Image

Specifications of RN2318(TE85L,F)

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
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Part Number RN2318(TE85L,F) Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS PNP 0.1W USM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 2224830 pcs stock Data sheet RN2318(TE85L,F).pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type PNP - Pre-Biased Supplier Device Package USM
Series - Resistor - Emitter Base (R2) 10 kOhms
Resistor - Base (R1) 47 kOhms Power - Max 100mW
Packaging Tape & Reel (TR) Package / Case SC-70, SOT-323
Other Names RN2318(TE85LF)
RN2318(TE85LF)-ND
RN2318(TE85LF)TR
RN2318TE85LF
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 16 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 200MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA
Base Part Number RN231*  
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