Part Number | 2SK3564(STA4,Q,M) | Manufacturer | Toshiba Semiconductor and Storage |
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Description | MOSFET N-CH 900V 3A TO-220SIS | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 77011 pcs stock | Data sheet | 1.2SK3564(STA4,Q,M).pdf2.2SK3564(STA4,Q,M).pdf |
Voltage - Test | 700pF @ 25V | Voltage - Breakdown | TO-220SIS |
Vgs(th) (Max) @ Id | 4.3 Ohm @ 1.5A, 10V | Vgs (Max) | 10V |
Technology | MOSFET (Metal Oxide) | Series | π-MOSIV |
RoHS Status | Tube | Rds On (Max) @ Id, Vgs | 3A (Ta) |
Polarization | TO-220-3 Full Pack | Other Names | 2SK3564(Q) 2SK3564(STA4,Q) 2SK3564(STA4Q) 2SK3564(STA4Q)-ND 2SK3564(STA4QM) 2SK3564Q 2SK3564Q-ND 2SK3564STA4QM |
Operating Temperature | 150°C (TJ) | Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Part Number | 2SK3564(STA4,Q,M) |
Input Capacitance (Ciss) (Max) @ Vds | 17nC @ 10V | IGBT Type | ±30V |
Gate Charge (Qg) (Max) @ Vgs | 4V @ 1mA | FET Feature | N-Channel |
Expanded Description | N-Channel 900V 3A (Ta) 40W (Tc) Through Hole TO-220SIS | Drain to Source Voltage (Vdss) | - |
Description | MOSFET N-CH 900V 3A TO-220SIS | Current - Continuous Drain (Id) @ 25°C | 900V |
Capacitance Ratio | 40W (Tc) |
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