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GP1M010A080N

GP1M010A080N

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Global Power Technologies GroupGlobal Power Technologies Group
Part Number:
GP1M010A080N
Manufacturer/Brand:
Global Power Technologies Group
Product Description:
MOSFET N-CH 900V 10A TO3PN
Datasheets:
GP1M010A080N.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
5292 pcs stock
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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GP1M010A080N Image

Specifications of GP1M010A080N

Global Power Technologies GroupGlobal Power Technologies Group
(Click the blank to close automatically)
Part Number GP1M010A080N Manufacturer Global Power Technologies Group
Description MOSFET N-CH 900V 10A TO3PN Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5292 pcs stock Data sheet GP1M010A080N.pdf
Vgs(th) (Max) @ Id 4V @ 250µA Vgs (Max) ±30V
Technology MOSFET (Metal Oxide) Supplier Device Package TO-3PN
Series - Rds On (Max) @ Id, Vgs 1.05 Ohm @ 5A, 10V
Power Dissipation (Max) 312W (Tc) Packaging Tape & Reel (TR)
Package / Case TO-3P-3, SC-65-3 Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 2336pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 900V Detailed Description N-Channel 900V 10A (Tc) 312W (Tc) Through Hole TO-3PN
Current - Continuous Drain (Id) @ 25°C 10A (Tc)  
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