Choose your country or region.

Home
Products
Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
RN2911FE(TE85L,F)

RN2911FE(TE85L,F)

RN2911FE(TE85L,F) Image
Image may be representation.
See specifications for product details.
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
RN2911FE(TE85L,F)
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
TRANS 2PNP PREBIAS 0.1W ES6
Datasheets:
RN2911FE(TE85L,F).pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
866693 pcs stock
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

REQUEST QUOTE

Please complete all required fields with your contact information.Click "SUBMIT RFQ"
we will contact you shortly by email. Or Email us:info@Micro-Semiconductors.com

In Stock 866693 pcs Reference Price(In US Dollars)

  • 1 pcs
    $0.153
  • 10 pcs
    $0.11
  • 25 pcs
    $0.086
  • 100 pcs
    $0.065
  • 250 pcs
    $0.046
  • 500 pcs
    $0.037
  • 1000 pcs
    $0.028
Target Price(USD):
Qty:
Please give us your target price if quantities greater than those displayed.
Total: $0.00
RN2911FE(TE85L,F)
Company Name
Contact Name
E-mail
Message
RN2911FE(TE85L,F) Image

Specifications of RN2911FE(TE85L,F)

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
(Click the blank to close automatically)
Part Number RN2911FE(TE85L,F) Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2PNP PREBIAS 0.1W ES6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 866693 pcs stock Data sheet RN2911FE(TE85L,F).pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 PNP - Pre-Biased (Dual) Supplier Device Package ES6
Series - Resistor - Emitter Base (R2) -
Resistor - Base (R1) 10 kOhms Power - Max 100mW
Packaging Cut Tape (CT) Package / Case SOT-563, SOT-666
Other Names RN2911FE(TE85LF)CT Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 200MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA  
Shut down

Related Products

Related tags

Hot information