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TK30E06N1,S1X

TK30E06N1,S1X

TK30E06N1,S1X Image
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Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
TK30E06N1,S1X
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
MOSFET N-CH 60V 43A TO-220
Datasheets:
TK30E06N1,S1X.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
138384 pcs stock
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 138384 pcs Reference Price(In US Dollars)

  • 1 pcs
    $0.399
  • 50 pcs
    $0.309
  • 100 pcs
    $0.269
  • 500 pcs
    $0.199
  • 1000 pcs
    $0.159
Target Price(USD):
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TK30E06N1,S1X Image

Specifications of TK30E06N1,S1X

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
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Part Number TK30E06N1,S1X Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 60V 43A TO-220 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 138384 pcs stock Data sheet TK30E06N1,S1X.pdf
Vgs(th) (Max) @ Id 4V @ 200µA Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Supplier Device Package TO-220
Series U-MOSVIII-H Rds On (Max) @ Id, Vgs 15 mOhm @ 15A, 10V
Power Dissipation (Max) 53W (Tc) Packaging Tube
Package / Case TO-220-3 Other Names TK30E06N1,S1X(S
TK30E06N1S1X
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 30V Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 60V
Detailed Description N-Channel 60V 43A (Ta) 53W (Tc) Through Hole TO-220 Current - Continuous Drain (Id) @ 25°C 43A (Ta)
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