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TPC8A02-H(TE12L,Q)

TPC8A02-H(TE12L,Q)

Toshiba Semiconductor and Storage
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Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
TPC8A02-H(TE12L,Q)
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
MOSFET N-CH 30V 16A SOP8 2-6J1B
Datasheets:
1.TPC8A02-H(TE12L,Q).pdf2.TPC8A02-H(TE12L,Q).pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
5932 pcs stock
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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Specifications of TPC8A02-H(TE12L,Q)

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
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Part Number TPC8A02-H(TE12L,Q) Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 30V 16A SOP8 2-6J1B Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5932 pcs stock Data sheet 1.TPC8A02-H(TE12L,Q).pdf2.TPC8A02-H(TE12L,Q).pdf
Vgs(th) (Max) @ Id 2.3V @ 1mA Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Supplier Device Package 8-SOP (5.5x6.0)
Series - Rds On (Max) @ Id, Vgs 5.6 mOhm @ 8A, 10V
Power Dissipation (Max) 1W (Ta) Packaging Tape & Reel (TR)
Package / Case 8-SOIC (0.173", 4.40mm Width) Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1970pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30V Detailed Description N-Channel 30V 16A (Ta) 1W (Ta) Surface Mount 8-SOP (5.5x6.0)
Current - Continuous Drain (Id) @ 25°C 16A (Ta)  
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