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TTC009,F(J

TTC009,F(J

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Toshiba Semiconductor and Storage

Specifications of TTC009,F(J

Toshiba Semiconductor and Storage

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Part Number	TTC009,F(J	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 3A 80V TO220-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5171 pcs stock	Data sheet	TTC009,F(J.pdf
Voltage - Collector Emitter Breakdown (Max)	80V	Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A
Transistor Type	NPN	Supplier Device Package	TO-220NIS
Series	-	Power - Max	2W
Packaging	Bulk	Package / Case	TO-220-3 Full Pack
Other Names	TTC009F(J TTC009FJ	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	150MHz
Detailed Description	Bipolar (BJT) Transistor NPN 80V 3A 150MHz 2W Through Hole TO-220NIS	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 500mA, 5V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	3A

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